The de-pinning of Schottky barrier at the In/n-GaAs(1 1 0) interface

Document Type

Article

Publication Date

1-1-1990

Abstract

The phenomenon of metal/semiconductor interface Fermi level "de-pinning" is observed at the interface of In on n-GaAs(1 1 0). The temperature dependence of Schottky barrier formation at the nonreactive In/n-GaAs(1 1 0) interface has been studied by photoemission spectroscopy. For the n-GaAs(1 1 0) surface, which is kept at liquid nitrogen temperature during cleave and indium deposition, the surface Fermi level pinning at midgap does not occur until a complete In overlayer is formed. When the In/n-GaAs(1 1 0) interface formed at low temperature is warmed up to room temperature, part of the GaAs surface band bending disappears, while the In overlayers froms clusters and the GaAs substrate is partly re-exposed. The phenomenon of "de-pinning" may shine new light on the Schottky barrier formation mechanism for nonreactive interface systems. Its implication is discussed in terms of various plausible Schottky barrier theories and models. © 1990.

Identifier

0025417686 (Scopus)

Publication Title

Solid State Communications

External Full Text Location

https://doi.org/10.1016/0038-1098(90)90207-R

ISSN

00381098

First Page

45

Last Page

48

Issue

1

Volume

74

Grant

4-2-1520

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