Defect instability in ultra-thin oxides on silicon

Document Type

Article

Publication Date

1-1-1997

Abstract

The instability of defects created in ultra-thin insulator, metal-oxide-silicon devices biased in the direct tunnel regime is investigated. For the case of electron injection from the silicon substrate, nearly complete defect relaxation is observed after the bias is removed, allowing the possibility of re-generating the defects. Modeling the defect generation process and examining differences between initial and subsequent degradation periods lead to an improved picture of both the relaxation process and the nature of the involved defects.

Identifier

0031150210 (Scopus)

Publication Title

Microelectronic Engineering

External Full Text Location

https://doi.org/10.1016/S0167-9317(97)00009-9

ISSN

01679317

First Page

25

Last Page

28

Issue

1-4

Volume

36

Grant

ECS-9530984

Fund Ref

National Science Foundation

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