Electrical characterization of annealed Ti/TiN/Pt contacts on N-type 6H-SiC epilayer

Document Type

Article

Publication Date

12-1-1999

Abstract

We report results of the electrical characteristics of in vacua deposited TVTiN/Pt contact metallization on n-type 6H-SIC epilayer as function of impurity concentration in the range of 3.3 x 1017 cm-3 to 1.9 x 1019 cm 3. The asdeposited contacts are rectifying, except for the highly doped sample. Only the lesser doped remains rectifying after samples are annealed at 1000 °C between 0.5 and l min in argon. Bulk contact resistance ranging from factors of W 5 to 10 4 fi-cm2 and Schottky barrier height in the range of 0.54-0.84 eV are obtained. Adhesion problems associated with metal deposition on pre-processed titanium is not observed, leading to excellent mechanical stability. Auger electron spectroscopy (AES) reveals the out-diffusion of Ti-Si and agglomeration of Ti-C species at the epilayer surface. The contact resistance remains appreciably stable after treatment in air at 650 °C for 65 h. The drop in SBH and the resulting stable contact resistance is proposed to be associated with the thermal activation of TiC diffusion barrier layer on the 6H-SIC epilayer during annealing. © 1999 IEEE.

Identifier

0033079571 (Scopus)

Publication Title

IEEE Transactions on Electron Devices

External Full Text Location

https://doi.org/10.1109/16.740888

ISSN

00189383

First Page

269

Last Page

274

Issue

2

Volume

46

Grant

NAS3-27011

Fund Ref

National Aeronautics and Space Administration

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