Thin terahertz detectors and emitters based on low-temperature-grown GaAs on sapphire

Document Type

Article

Publication Date

1-1-2000

Abstract

Presented is a fabrication technique, alternative to epitaxial liftoff, which enhances the performance of THz antenna detectors and allows building probe structures on top of the antenna dipole by means of etching of GaAs substrate. When used as emitters, a sample to be imaged can be brought as close as 1 μm to the THz emission point. The application of these devices for THz near-field-imaging will be discussed.

Identifier

0034539232 (Scopus)

Publication Title

Pacific Rim Conference on Lasers and Electro Optics CLEO Technical Digest

External Full Text Location

https://doi.org/10.1109/cleo.2000.907347

First Page

528

Last Page

529

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