Optically assisted metal-induced crystallization of thin Si films for low-cost solar cells

Authors

Wei Chen, National Renewable Energy Laboratory
Bhushan Sopori, National Renewable Energy Laboratory
Kim Jones, National Renewable Energy Laboratory
Robert Reedy, National Renewable Energy Laboratory
N. M. Ravindra, New Jersey Institute of Technology
Roger Aparacio, Institute of Energy Conversion
Robert Birkmire, Institute of Energy Conversion
Scott Morrison, M V Systems
Ken Coats, M V Systems
Arun Madan, M V Systems

Document Type

Conference Proceeding

Publication Date

1-1-2001

Abstract

Optically assisted, metal induced crystallization (MIC) was used to convert amorphous Si films, deposited on Al coated glass substrates, into polycrystalline Si (pc-Si). The study investigated the effects of deposition temperature, process temperature, and film thickness on the grain orientation, grain size, and crystallization front of the processed films. Furthermore, we have attempted to examine the role of Al in MIC - in particular, whether the metal can be confined to the interface while grain enhancement occurs. © 2001 Materials Research Society.

Identifier

1842692251 (Scopus)

ISBN

[1558996214, 9781558996212]

Publication Title

Materials Research Society Symposium Proceedings

External Full Text Location

https://doi.org/10.1557/proc-685-d3.2.1

ISSN

02729172

First Page

41

Last Page

46

Volume

685

Recommended Citation

Chen, Wei; Sopori, Bhushan; Jones, Kim; Reedy, Robert; Ravindra, N. M.; Aparacio, Roger; Birkmire, Robert; Morrison, Scott; Coats, Ken; and Madan, Arun, "Optically assisted metal-induced crystallization of thin Si films for low-cost solar cells" (2001). Faculty Publications. 15403.
https://digitalcommons.njit.edu/fac_pubs/15403