Electrical behavior of double-sided metal/porous silicon structures for optoelectronic devices

Document Type

Article

Publication Date

1-2-2002

Abstract

Porous silicon (PS)-based devices consisting of a metal/PS/Si/PS/metal structure were investigated in this study for potential use in photodiodes and solar cells. The PS layers act as front antireflective coating for short wavelength light and back surface reflector/diffuser for high wavelength radiation. The PS layers were formed by the chemical etching of crystalline silicon. Different metals such as Au/Cr, W, Ta, WTi, Cr and Ti were sputter deposited onto both PS surfaces. The electrical behavior of the resulting devices was determined to ascertain the most appropriate metallic contact for the development of these optoelectronic devices. © 2002 Elsevier Science B.V. All rights reserved.

Identifier

0037005862 (Scopus)

Publication Title

Materials Science and Engineering C

External Full Text Location

https://doi.org/10.1016/S0928-4931(01)00422-2

ISSN

09284931

First Page

359

Last Page

362

Issue

1-2

Volume

19

Grant

GDA-541A-D-640

Fund Ref

Comisión Interministerial de Ciencia y Tecnología

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