Stimulated optical transitions in Er-doped silicon nanostructures

Authors

B. V. Kamenev, Newark College of Engineering
V. I. Emel'yanov, Lomonosov Moscow State University
V. Yu Timoshenko, Lomonosov Moscow State University
P. K. Kashkarov, Lomonosov Moscow State University
E. I. Terukov, Ioffe Institute
V. Kh Kudoyarova, Ioffe Institute

Document Type

Conference Proceeding

Publication Date

7-28-2003

Abstract

Photoluminescence (PL) of Er³⁺ ions in nanocrystalline (amorphous) silicon matrix has been investigated under a high level of optical excitation. A superlinear increase of the PL intensity, a shortening of the PL decay time, and strong angular dependence were found at the excitation intensity above 200 kW/cm². These effects are observed only in samples with presence of silicon nanocrystalls and explained by stimulated optical transitions.

Identifier

0038826096 (Scopus)

Publication Title

Materials Research Society Symposium Proceedings

ISSN

02729172

First Page

755

Last Page

760

Volume

737

Recommended Citation

Kamenev, B. V.; Emel'yanov, V. I.; Timoshenko, V. Yu; Kashkarov, P. K.; Terukov, E. I.; and Kudoyarova, V. Kh, "Stimulated optical transitions in Er-doped silicon nanostructures" (2003). Faculty Publications. 14031.
https://digitalcommons.njit.edu/fac_pubs/14031