Polarized Raman scattering and localized embedded strain in self-organized Si/Ge nanostructures

Document Type

Article

Publication Date

12-15-2003

Abstract

An overview is given of the qualitative difference in angular dependencies of polarized Raman intensities for Si-Si, Si-Ge, and Ge-Ge vibrations in multilayers of Ge islands grown on Si. Data show that the dome-shaped Ge islands are fully relaxed and that the strain field is localized within the Si matrix. Measurements on corresponding samples containing pyramid-related islands do not indicate similar relaxation and strain transfer to the Si layers.

Identifier

0347763789 (Scopus)

Publication Title

Applied Physics Letters

External Full Text Location

https://doi.org/10.1063/1.1628403

ISSN

00036951

First Page

5035

Last Page

5037

Issue

24

Volume

83

Fund Ref

National Research Council

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