NBTI behavior of GE/HFO2/AL gate stacks

Document Type

Conference Proceeding

Publication Date

9-17-2008

Abstract

In summary, comparison of NBTI characteristics in Al/HfO2/Ge with nitrided and non-nitrided Ge surface at high temperatures (125° C) reveals that nitridation creates additional bulk traps even though shows initial improvements. We, therefore, noticed that nitrided Ge has higher ΔV FB shift and stress induced leakage current than nonnitrided samples. NBTI degradation of nitrided germanium surface is also consistent with literature regarding NBTI on nitrided Si devices. Optimization on nitrogen content and nitridation procedure may improve sensitivity to NBTI. © 2008 IEEE.

Identifier

51549121825 (Scopus)

ISBN

[9781424420506]

Publication Title

IEEE International Reliability Physics Symposium Proceedings

External Full Text Location

https://doi.org/10.1109/RELPHY.2008.4558972

ISSN

15417026

First Page

653

Last Page

654

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