Bandgap reduction and photoelectrochemical properties of ZnO:N films deposited by reactive RF magnetron sputtering

Document Type

Conference Proceeding

Publication Date

12-1-2008

Abstract

ZnO:N films were deposited by reactive RF magnetron sputtering in mixed N2 and O2 gas ambient. Their PEC properties were measured and compared with those of as-grown and annealed ZnO films. The ZnO:N films exhibit photoresponse in the visible-light region, yielding higher total currents than pure ZnO thin films. With combined ultraviolet/infrared and color filtering, our data indicate that the main contribution to the high photocurrent is from the absorption of light in long-wavelength regions. Our results demonstrate that N incorporation in ZnO can narrow the bandgap and create absorption in the visible-light region for ZnO films, suggesting that N incorporation could be a potential method to improve the efficiency of PEC water splitting using ZnO-based materials. © 2008 MS&T'08 ®.

Identifier

63749119830 (Scopus)

ISBN

[9781605606217]

Publication Title

Materials Science and Technology Conference and Exhibition MS and T 08

First Page

952

Last Page

961

Volume

2

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