Synthesis and characterization of bandgap-reduced p-type cu-incorporated ZnO films

Document Type

Conference Proceeding

Publication Date

12-1-2008

Abstract

Cu-doped ZnO thin films with significantly reduced bandgaps were synthesized by incorporation of Cu at room temperature and followed by post-deposition annealing at 500°C in air for 2 hours. All the films were synthesized by RF magnetron sputtering in O2 gas ambient on F-doped tin oxide-coated glass. We found that annealing at 600°C, unlike at 500°C, caused the formation of the CuO phase in the ZnO:Cu films. Optical absorption indicated that some of the Cu in as- grown ZnO:Cu films is metallic. It can be converted into Cu+1 acceptor states by post-deposition annealing at 500°C in air. Mott-Schottky plots, open-circuit response to illumination, and illuminated current-voltage curves along with optical-absorption measurements revealed that ZnO:Cu thin films with p-type conductivity and significantly reduced bandgap were successfully synthesized by Cu incorporation. © 2008 M5&T'08 ®.

Identifier

63749123898 (Scopus)

ISBN

[9781605606217]

Publication Title

Materials Science and Technology Conference and Exhibition MS and T 08

First Page

901

Last Page

913

Volume

2

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