Active field effect capacitive sensors for high-throughput, label-free nucleic acid analysis
Document Type
Conference Proceeding
Publication Date
11-20-2009
Abstract
We report a highly selective technique for rapid and label-free analysis of nucleic acid sample using Metal Oxide Semiconductor (MOS) capacitive sensors. The binding of charged macromolecules such as DNA on the surface of these Field Effect Devices modifies the charge distribution in the Semiconductor (Si) region of the sensor. These changes are manifested as a significant shift in the Capacitance-Voltage (C-V) characteristics measured across the device. The speed and selectivity of the detection process is enhanced by the use of external electric field of controlled intensity. This simple and high-throughput sensing technique holds promises for future electronic DNA arrays and Lab-on-a Chip devices. © 2009 Materials Research Society.
Identifier
70449585526 (Scopus)
Publication Title
Materials Research Society Symposium Proceedings
ISSN
02729172
First Page
181
Last Page
186
Volume
1139
Recommended Citation
Mannoor, Manu Sebastian; James, Teena; Ivanov, Dentcho V.; Braunlin, Bill; and Beadling, Les, "Active field effect capacitive sensors for high-throughput, label-free nucleic acid analysis" (2009). Faculty Publications. 11849.
https://digitalcommons.njit.edu/fac_pubs/11849
