Document Type
Thesis
Date of Award
Spring 5-31-1998
Degree Name
Master of Science in Electrical Engineering - (M.S.)
Department
Electrical and Computer Engineering
First Advisor
N. M. Ravindra
Second Advisor
Kenneth Sohn
Third Advisor
Edwin Hou
Fourth Advisor
Oktay H. Gokce
Abstract
The objective of this thesis was 1) to study the radiative properties of silicon in the wavelength range of 1 to 20 microns and temperature range of 30 to 1000°C for the development of a multi-wavelength pyrometer 2) to develop a [sic] methodologies for deconvolution of the measured optical properties to yield fundamental optical constants of bulk materials. A novel spectral emissometer has been utilized for measurement of the temperature dependent radiative properties of silicon. The temperature determination capability of the emissometer was tested and verified using a standard thermocouple embedded in a silicon wafer. The temperature measurement accuracy, with the emissometer, was found to be within ± 10°C of the thermocouple temperature for a temperature range of 30 to 300°C. The experimental results presented in this thesis showed that the measurement of high temperature optical properties could be performed reliably with a novel non-contact, real-time approach using the spectral emissometer. The optical properties of n and p-type lightly and heavily doped silicon wafers were investigated. These studies have led us to establish spectral emissometer as a reliable technique for simultaneous measurements of radiative properties and temperature in the 1-20 µm wavelength range.
Recommended Citation
Patel, Anamika, "Radiative properties of silicon" (1998). Theses. 903.
https://digitalcommons.njit.edu/theses/903
