Date of Award

Fall 1998

Document Type

Thesis

Degree Name

Master of Science in Chemical Engineering - (M.S.)

Department

Chemical Engineering, Chemistry and Environmental Science

First Advisor

Roland A. Levy

Second Advisor

Norman W. Loney

Third Advisor

James M. Grow

Abstract

Titanium tetrachioride and ammonia were used as precursors in a Jow pressure chemical vapor deposition process to deposit titanium nitride films on silicon wafers. The process was carried out at temperatures from 450 to 850°C and the activation energy for the reaction was determined. The order of the reaction, with respect to the partial pressures of the reactant gases, was determined by carrying out the reaction at varying partial pressures of the reactant gases. The following rate equation was established for the reaction:

rate = 4.35*10-5exp(-5150/T)*(PNH3)1.37(PTicl4)-0.42

The titanium nitride thin films deposited were characterized for properties like resistivity, stress, hardness, and density. The effects of varying the process parameters (temperature, flow ratio, etc.) on these film properties were studied.

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