Document Type
Thesis
Date of Award
Fall 1-31-2005
Degree Name
Master of Science in Electrical Engineering - (M.S.)
Department
Electrical and Computer Engineering
First Advisor
Leonid Tsybeskov
Second Advisor
Haim Grebel
Third Advisor
Marek Sosnowski
Abstract
In this thesis, Raman Scattering (RS) and photoluminescence (PL) measurements of Ge nanowires (NWs) grown via vapor-liquid-solid (VLS) using chemical vapor deposition silicon substrates consisting of (100) and (111) crystallographic orientations are reported. Ge NWs grown are ~40 nm in diameter, approximately a micrometer in length, and a sharp narrow Raman peak at ~300cm-1 indicates single crystal quality. An absence of SiGe peak in the Raman spectra indicates that SiGe interdiffusion is insignificant for the NW volume. Low temperature PL-intensity-dependence spectra indicate that the observed emission originates at the Ge NW - Si substrate interface, where SiGe intermixing has been detected. This interface is formed differently for (111) and (100) oriented Si substrates due to the <111> preferential growth direction of Ge NWs.
Recommended Citation
Sharma, Varun, "Optical properties of SiGe nanostructures" (2005). Theses. 468.
https://digitalcommons.njit.edu/theses/468
