Document Type

Thesis

Date of Award

Fall 12-31-2017

Degree Name

Master of Science in Materials Science and Engineering - (M.S.)

Department

Committee for the Interdisciplinary Program in Materials Science and Engineering

First Advisor

N. M. Ravindra

Second Advisor

Michael Jaffe

Third Advisor

Oktay H. Gokce

Fourth Advisor

S. Basuray

Abstract

The formation of low resistance metal contacts on two-Dimensional layer (2-D) of WSe2 is a big challenge. In this research, a comparative study is presented on the electrical properties of metal/WSe2 Schottky barrier diodes with various metals such as Au, In, Al, and Ga in the temperature range of 80K to 400K well within the domain of thermionic emission theory.

Topics covered here include the factors that determine the Schottky barrier height, the device capacitance, and its current-voltage (I-V) characteristics. I-V curves for different metals on WSe2 are analyzed as function of temperature. Barrier height is determined from Au-nWSe2 Schottky barrier diode.

This study provides a theoretical background for the selection of favourable metals on monolayer WSe2.

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