Document Type

Thesis

Date of Award

Fall 12-31-2017

Degree Name

Master of Science in Applied Physics - (M.S.)

Department

Physics

First Advisor

N. M. Ravindra

Second Advisor

Michael Jaffe

Third Advisor

Ken Keunhyuk Ahn

Fourth Advisor

George E. Georgiou

Abstract

Properties of monolayer semiconductor, MoS2, are presented in the research. Schottky barrier height and Schottky-Mott rules are discussed. The current-voltage measurement and capacitance-voltage measurement are analyzed considering the role of the work function. We mainly focus on metal semiconductor contacts on molybdenum disulfide (MoS2). The properties of bulk and monolayer molybdenum disulfide are discussed. The differences between the bulk and monolayer, based on band gap structure theory, are presented. Utilizing the data obtained in the literature, the influence of temperature on the electrical properties of monolayer molybdenum disulfide are analyzed. In particular, the electrical properties of metals on MoS2 such as current-voltage (I-V) characteristics and capacitance-voltage (C-V) characteristics are addressed. Applications of metals on MoS2 are presented.

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