Date of Award
Fall 12-31-2017
Document Type
Thesis
Degree Name
Master of Science in Applied Physics - (M.S.)
Department
Physics
First Advisor
N. M. Ravindra
Second Advisor
Michael Jaffe
Third Advisor
Ken Keunhyuk Ahn
Fourth Advisor
George E. Georgiou
Abstract
Properties of monolayer semiconductor, MoS2, are presented in the research. Schottky barrier height and Schottky-Mott rules are discussed. The current-voltage measurement and capacitance-voltage measurement are analyzed considering the role of the work
Recommended Citation
Chang, Xiao, "Electrical properties of metal semiconductor contacts - metals on MoS2: a case study" (2017). Theses. 43.
https://digitalcommons.njit.edu/theses/43
