Document Type
Thesis
Date of Award
Fall 12-31-2017
Degree Name
Master of Science in Applied Physics - (M.S.)
Department
Physics
First Advisor
N. M. Ravindra
Second Advisor
Michael Jaffe
Third Advisor
Ken Keunhyuk Ahn
Fourth Advisor
George E. Georgiou
Abstract
Properties of monolayer semiconductor, MoS2, are presented in the research. Schottky barrier height and Schottky-Mott rules are discussed. The current-voltage measurement and capacitance-voltage measurement are analyzed considering the role of the work function. We mainly focus on metal semiconductor contacts on molybdenum disulfide (MoS2). The properties of bulk and monolayer molybdenum disulfide are discussed. The differences between the bulk and monolayer, based on band gap structure theory, are presented. Utilizing the data obtained in the literature, the influence of temperature on the electrical properties of monolayer molybdenum disulfide are analyzed. In particular, the electrical properties of metals on MoS2 such as current-voltage (I-V) characteristics and capacitance-voltage (C-V) characteristics are addressed. Applications of metals on MoS2 are presented.
Recommended Citation
Chang, Xiao, "Electrical properties of metal semiconductor contacts - metals on MoS2: a case study" (2017). Theses. 43.
https://digitalcommons.njit.edu/theses/43
