Date of Award

Spring 2008

Document Type

Thesis

Degree Name

Master of Science in Electrical Engineering - (M.S.)

Department

Electrical and Computer Engineering

First Advisor

Zafar Iqbal

Second Advisor

Marek Sosnowski

Third Advisor

Haim Grebel

Abstract

Growth of Carbon Nanowalls has been carried out by Radio Frequency Chemical Vapor Deposition (RF-PECVD) on various substrates. Hydrogen was used as an active gas for the growth where as Ethanol bubbled with Argon was used as carbon source for formation of Carbon Nanowalls (CNW). The growth was then confinned by Raman Spectroscopy and Scanning Electron Microscope (SEM) images. Also the need of using catalyst in CNW has been analyzed. The intensities of D and G bands obtained from Raman spectrum have been related to the length of Graphene walls, to study the CNW's length on different substrates.

The growth was carried on three substrates; Silicon wafer, Silicon wafer coated with Nickel Formate Dihydrate (NFD) as a catalyst.and Pure Nickel foil. It has been found that the catalyst does not play much important role in the growth of Carbon Nanowalls. Also it has been determined that Graphene sheets are the basic building blocks for nanowalls and the Graphene walls obtained in our experiment comprise only of one to two Graphene sheets. The morphologies of the growth of Carbon Nanowalls have been studied on the three substrates using SEM images. The growth of CNW in case of Silicon substrate and Silicon substrate having catalyst was found to be only in that direction and places, where the gases were passing these substrates. But in case of Nickel foil CNWs were found over the whole substrate that might be resulting because of Nickel itself acting as an active catalyst for the whole surface.

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