Document Type
Thesis
Date of Award
12-31-1990
Degree Name
Master of Science in Electrical Engineering - (M.S.)
Department
Electrical and Computer Engineering
First Advisor
Ken K. Chin
Second Advisor
Walter F. Kosonocky
Third Advisor
Roy H. Cornely
Abstract
The design of a monolithic 8-12 micron GaAs/AlGaAs multiple quantum well infrared image sensor has been tested by computer simulation using PISCES-IIB and SPICE3B.1 software packages. The device structure is in the form of a monolithic GaAs/AlGaAs multiple quantum well (MQW) photoconductor integrated with a GaAs MESFET readout circuit. The readout MESFET's are located in the top layer of the MQW so that a relatively standard GaAs MESFET design and processing technology can be used. The theoretical feasibility of such a vertically integrated structure and the processing compatibility of GaAs/AlGaAs MQW and GaAs MESFET's were investigated in this work.
Our simulation shows that in order to provide electrical isolation between the GaAs MESFET and the MQW photoconductor, for n-channel doping concentration of 2*1017 cm-3, the p-type layer separating them should not be less than 0.7 um for a dopant concentration of 1016 cm-3
Operation of a pixel readout in the form of X-Y addressable transimpedence MESFET amplifier was studied by SPICE3B.1 simulation.
A backside pyramid structure was chosen for optical isolation between neighbouring cells and to provide direction for the required coupling of the radiation. For a substrate thickness of 100 um and a unit cell size of 100 * 100 um2 for each detector element, our calculation indicates that the optimized angle between the pyramid surface and the substrate surface is 37°.
Recommended Citation
Zhu, Ye, "Simulation study of monolithic 8-12 micron GaAs/AlGaAs multiple quantum well infrared image sensor" (1990). Theses. 3029.
https://digitalcommons.njit.edu/theses/3029
