Temperature dependent current-voltage characteristics in thin SiO2 films

Author

Jin Zhao, New Jersey Institute of Technology

Document Type

Thesis

Date of Award

5-31-1990

Degree Name

Master of Science in Electrical Engineering - (M.S.)

Department

Electrical and Computer Engineering

First Advisor

N. M. Ravindra

Second Advisor

William N. Carr

Third Advisor

Raj Pratap Misra

Abstract

An analysis of the Fowler-Nordheim tunneling (FNT) theory and its application to temperature dependent current-voltage characteristics, of very thin films of SiO₂ on silicon, is presented. The final results are believed to provide the most complete examination of FN emission theory and predict the breakdown electric field in thin SiO₂ films. The role of the roughness, at the Si-SiO₂ interface, in determining the FNT current and breakdown mechanisms in metal-oxide-semiconductor (MOS) structures are also discussed.

Recommended Citation

Zhao, Jin, "Temperature dependent current-voltage characteristics in thin SiO2 films" (1990). Theses. 3026.
https://digitalcommons.njit.edu/theses/3026