Date of Award

Fall 1-31-2017

Document Type

Thesis

Degree Name

Master of Science in Materials Science and Engineering - (M.S.)

Department

Committee for the Interdisciplinary Program in Materials Science and Engineering

First Advisor

N. M. Ravindra

Second Advisor

Michael Jaffe

Third Advisor

Eon Soo Lee

Abstract

The purpose of this thesis is to study the heat transfer in silicon. Silicon is the key semiconductor material, and thermal processing is the traditional method that is used in semiconductor processing. In this research, we can predict the temperature of the silicon wafer during heating. This ability to predict wafer temperature during semiconductor processing will facilitate in the following: (a) Process temperature uniformity, (b) Film thickness uniformity, (c) Diffusion, (d) Process yield, (e) Thermally induced stresses, and (f) Device yield - spatially and temporally across the wafer. For low temperature applications, IC chips can be modeled to simulate the heat flow. Therefore, the status of the chip while heating can be studied to understand the influence of the heating process on the performance of the chips, which is useful in the assessment of device performance and reliability.

The research, in this thesis, utilizes a traditional hot plate as the source of heating of the silicon wafer. The modeling of heating of the wafer is based on ANSYS CFX software, a software tool that permits to solve fluid flow problems. The model considers heat conduction in silicon wafer, heat convection in air, and heat radiation. The influence of silicon wafer thickness and diameter on the wafer temperature distribution is simulated.

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