Document Type
Thesis
Date of Award
1-31-1990
Degree Name
Master of Science in Electrical Engineering - (M.S.)
Department
Electrical and Computer Engineering
First Advisor
Kenneth Sohn
Second Advisor
Roy H. Cornely
Third Advisor
Lawrence Suchow
Abstract
Preparation of thin superconducting films by direct RF sputter deposition on Si, MgO, SrTiO3 and quartz substrates and silver and Sl3N4 buffer layers (deposited on silicon substrates) was studied. To study resistance versus temperature characteristics of thin films and bulk materials, a computerized measurement system was developed. 1-1.5 pm thick YBaCuO films deposited on Si3N4/Si were found to be insulating with room temperature resistance higher than 236KΩ, while films with Ag as a buffer and/or a passivating layer exhibited metallic behavior with room temperature resistances lower than 700mΩ. The area directly under the 2.25 inches diameter powder pressed target was found resputtered due to high energy particles emitted (from the target) normal to the surface of the target. Rutherford Backscattering Spectrometry (RBS) experiments were analyzed on a computer at NJIT and the composition of films, not directly under the target, was studied as a function of their position. Films deposited 1.2 to 2.8 inches away from the edge of the shadow of powder pressed target (2.25 inches in diameter) were found only Cu deficient. Improvement in the film composition is expected with Cu rich targets. Density of the targets increased from 66% to 77% of the theoretical density by sintering the targets at 10° C above the melting temperature of 930° C. Influence of sputtering gas pressure, oxygen partial pressure in the total sputtering gas, substrate-target spacing and water flow in the anode cooling line on the substrate temperature was investigated.
Recommended Citation
Patel, Vipulkumar, "Sputter deposition and characterization of high Tc superconducting thin films" (1990). Theses. 2901.
https://digitalcommons.njit.edu/theses/2901
