Document Type
Thesis
Date of Award
1-31-1990
Degree Name
Master of Science in Electrical Engineering - (M.S.)
Department
Electrical and Computer Engineering
First Advisor
Walter F. Kosonocky
Second Advisor
Durgamadhab Misra
Third Advisor
Ken K. Chin
Abstract
On the basis of a study on numerous HEMT structures, a simple and useful technique was established for the characterization of 2DEG layers. This technique utilizes the magnetic field-dependence of the resistivity and Hall coefficient of the HEMT structure, to determine the values of the sheet density and mobility of 2DEG in the presence of other parallel conductive layers. This method of analysis was compared with previously used techniques such as Shubnikov-de Haas and the etch removal of the parallel conductive layers. Through this comparison and several measurements it was found that this procedure gives reproducible values for the 2DEG mobility and sheet density for measurements at 77K and easily obtainable magnetic fields of up to 5kG.
Recommended Citation
Nouri, Naghmeh, "The magnetotransport analysis of HEMT structures at low fields" (1990). Theses. 2882.
https://digitalcommons.njit.edu/theses/2882
