Document Type
Thesis
Date of Award
5-31-1991
Degree Name
Master of Science in Electrical Engineering - (M.S.)
Department
Electrical and Computer Engineering
First Advisor
N. M. Ravindra
Second Advisor
Kenneth Sohn
Third Advisor
Durgamadhab Misra
Abstract
Experimental analysis, modeling and simulation of the formation and electrical characterization of TiSi2/n+/p-Si shallow junctions are presented here. The formation of shallow n+-p junction, by ion implantation of As+ through Ti films evaporated on p-Si substrates followed by Rapid Thermal Annealing ( RTA ) and conventional furnace annealing has been performed in these experiments. Structural techniques such as Secondary Ion Mass Spectroscopy ( SIMS ) and Rutherford Backscattering spectroscopy ( RBS ) experiments have been employed to characterize the devices, and RUMP simulator was used to analyze and interpret the RBS data. Current-voltage characteristics have been simulated using PISCES simulator.
Recommended Citation
Wu, Ying, "TiSi2/n+/p silicon junction formation by ion implantation through metal technique" (1991). Theses. 2671.
https://digitalcommons.njit.edu/theses/2671
