Date of Award
Master of Science in Engineering Science- (M.S.)
Chemical Engineering, Chemistry and Environmental Science
Roland A. Levy
James M. Grow
David S. Kristol
Diethylsilane (DES) has been used as a precursor to produce silicon dioxide films by low pressure chemical vapor deposition. These films were synthesized in the temperature range of 350 to 475°C thus allowing the use of the material as an intermetal dielectric or as a top layer passivation coating in microelectronic devices. In that process, the growth rate was observed to follow an Arrhenius behavior yielding an activation energy of 10 kcal/mol. The growth rate was also observed to increase with higher pressure and to vary as a function of the square root of the DES flow rate and O2/DES ratio. In both the pressure and the O2/DES ratio studies, there were points of abrupt cessation in deposition. The density of the films was measured to be close to 2.2 g/cm3 regardless of deposition conditions. RBS measurements revealed the absence of incorporated carbon and a near stochiometric composition of SiO2.2. The dielectric breakdown strength of an SiO2 film deposited at 400 °C was found to be 2 MV/cm. Infrared spectra of the films showed the usual Si-0 bond stretching and bond bending absorption bands centered at 1060, 810, and 440 cm-1. Si-H bending band at 880 cm-1 was also observed in SiO2 films prepared under certain processing conditions. The refractive index of the films was found to be at 1.46 independent of deposition temperature.
Gorthy, Chakravarthy Srinivasa, "Low temperature synthesis and characterization of LPCVD silicon dioxide films using diethylsilane" (1992). Theses. 2260.