Date of Award

Spring 2015

Document Type

Thesis

Degree Name

Master of Science in Materials Science and Engineering - (M.S.)

Department

Committee for the Interdisciplinary Program in Materials Science and Engineering

First Advisor

N. M. Ravindra

Second Advisor

Michael Jaffe

Third Advisor

Halina Opyrchal

Fourth Advisor

Balraj Subra Mani

Fifth Advisor

Willis B. Hammond

Abstract

In the literature, extensive studies have been performed to study the electronic properties of doped graphene. This is due to the potentially large number of applications of graphene in p-n junctions, transistors, photodiodes and lasers. By utilizing single heteroatom chemical doping method or electric field-induced method, one can introduce a band gap, ranging from 0.1eV to 0.5eV, in graphene. A tunable bandgap is highly desirable because it would allow significant flexibility in the design and optimization of such devices, particularly if it could be tuned by adjusting the doping configurations. Here, we demonstrate the realization of a widely tunable electronic bandgap in B and N co-doped graphene, of which the dopant concentration is from 6.25% to 75%. A recent study of the impact of co-doping on the band gap and bond length of graphene, from Pooja Rani Research Group in 2013, has inspired this research to further investigate the co-doping method. Materials Studio simulation tool, based on Density Functional Theory, has been utilized in this study. The simulations show that, with up to 75% concentration, a 2.99eV wide band gap is obtained. An ascending trend line (band gap as a function of dopant atoms) is also obtained from extensive simulation results. The results of this work, i.e., heteroatoms co-doping band gap control suggests novel nanoelectronics device applications based on graphene.

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