Document Type
Thesis
Date of Award
5-31-1993
Degree Name
Master of Science in Electrical Engineering - (M.S.)
Department
Electrical Engineering
First Advisor
Marek Sosnowski
Second Advisor
Roy H. Cornely
Third Advisor
Haim Grebel
Abstract
The purpose of this work was to study the effect of 4° miscut and chem¬ical pretreatment of Si(111) wafers on the epitaxial growth of Al by thermal evaporation in a UHV environment (~ 10-9 Torr). Two chemical pretreatments of the wafers were used. One included HF only and the other included NH4F after an initial HF treatment. The substrates were not heated dur¬ing deposition. XRD measurements of the films were done before and after annealing in a high vacuum oven for one hour at temperatures between 200 and 350°C.
The A1(200) films deposited on wafers pretreated with NH4F have good quality as indicated by the narrow peaks in the XRD measurements. The peaks narrowed by almost 15% after annealing at temperature as low as 250°C.
The surprisingly good crystallinity and orientation of these films were attributed to the uniformly distributed atomic steps formed on the substrate surface by the chemical pretreatment of NH4F.
The film deposition work and analytical studies were done at NJIT's Drexler Microelectronics Laboratory and AT&T Bell Laboratories respec-tively.
Recommended Citation
Ramac, Samuel Cruz, "Aluminum epitaxy on silicon" (1993). Theses. 1876.
https://digitalcommons.njit.edu/theses/1876
