Document Type

Thesis

Date of Award

10-31-1993

Degree Name

Master of Science in Electrical Engineering - (M.S.)

Department

Electrical and Computer Engineering

First Advisor

N. M. Ravindra

Second Advisor

Walter F. Kosonocky

Third Advisor

Kenneth Sohn

Abstract

In-situ temperature monitoring, mapping, and control have become significant in semiconductor processes. Temperature of these processes can be measured by making use of the thermal emission from substrates in the infrared region. Various methods have been proposed to provide multicolor infrared detection. One such method involves placing segmented infrared filters close to the focal plane. The present study aims at gaining an insight into the design, fabrication and characterization of infrared filters. Filters were designed and fabricated with peak transmission at 1.5, 3.0, and 4.5 m. Extensive spectroscopic studies, using FTIR spectroscopy, have been performed in the infrared region, on the materials chosen for the filters - Si, SiO2, and Al2O3. The spectral transmittance characteristics of the filters have also been studied using optical spectrometry to monitor their performance at the desired wavelengths.

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