Document Type
Thesis
Date of Award
Winter 1-31-1994
Degree Name
Master of Science in Electrical Engineering - (M.S.)
Department
Electrical and Computer Engineering
First Advisor
N. M. Ravindra
Second Advisor
Walter F. Kosonocky
Third Advisor
Kenneth Sohn
Abstract
Thin films Silicides of Tungsten and Tantalum have become very important for IC manufacturing. W and TaSi2 films were deposited on silicon substrates by CVD and Co-sputtering techniques respectively. These films have been characterized using current-voltage technique. The analysis of the obtained experimental measurements has been performed in the light of Schottky-Mott theory. The effects of annealing were studied using Rapid Thermal Processing technique in the temperature range of 500 to 700°C, in nitrogen atmosphere at a constant pressure of 5x10-6 ton for a duration of 30 seconds.The increase in annealing temperature resulted in the formation of ohmic contact evidenced by current-voltage and sheet-resistance measurements. Typical sheet -resistances were found to be in the order of 6-12Q /square for tungsten silicide and 2-7Q /square for tantalum silicide. The RTP technique,as concluded from the results, was found to be very effective in the formation of ohmic contacts.
Recommended Citation
Kodali, Anitha, "Fabrication and characterization of WSi2/p-si and TaSi2/p-si devices" (1994). Theses. 1629.
https://digitalcommons.njit.edu/theses/1629
