Date of Award

Spring 1994

Document Type

Thesis

Degree Name

Master of Science in Materials Science and Engineering - (M.S.)

Department

Committee for the Interdisciplinary Program in Materials Science and Engineering

First Advisor

Ravindra, N. M.

Second Advisor

Russo, Onofrio L.

Third Advisor

Buteau, Leon Joseph

Abstract

Cubic silicon carbide films grown by chemical vapor deposition (CVD) on silicon substrates typically have n-type conductivity at 300 °K dominated by a heavily compensated donor with a binding energy in the < 20 meV range. Binding energies <20

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