Document Type


Date of Award

Spring 5-31-1994

Degree Name

Master of Science in Materials Science and Engineering - (M.S.)


Committee for the Interdisciplinary Program in Materials Science and Engineering

First Advisor

N. M. Ravindra

Second Advisor

Onofrio L. Russo

Third Advisor

Leon Joseph Buteau


Cubic silicon carbide films grown by chemical vapor deposition (CVD) on silicon substrates typically have n-type conductivity at 300 °K dominated by a heavily compensated donor with a binding energy in the < 20 meV range. Binding energies <20 meV are not expected in SiC for isolated donors because the shallowest expected binding energy for an electron bound to an isolated donor is approximately 47 meV. The work done on this topic by a few group of scientists has been studied.