Date of Award
Master of Science in Materials Science and Engineering - (M.S.)
Committee for the Interdisciplinary Program in Materials Science and Engineering
N. M. Ravindra
Onofrio L. Russo
Leon Joseph Buteau
Cubic silicon carbide films grown by chemical vapor deposition (CVD) on silicon substrates typically have n-type conductivity at 300 °K dominated by a heavily compensated donor with a binding energy in the < 20 meV range. Binding energies <20
Farhad-Garousi, Mark, "Processing, structural and electrical properties of SiC" (1994). Theses. 1617.