Document Type
Thesis
Date of Award
Spring 5-31-1994
Degree Name
Master of Science in Materials Science and Engineering - (M.S.)
Department
Committee for the Interdisciplinary Program in Materials Science and Engineering
First Advisor
N. M. Ravindra
Second Advisor
Onofrio L. Russo
Third Advisor
Leon Joseph Buteau
Abstract
Cubic silicon carbide films grown by chemical vapor deposition (CVD) on silicon substrates typically have n-type conductivity at 300 °K dominated by a heavily compensated donor with a binding energy in the < 20 meV range. Binding energies <20 meV are not expected in SiC for isolated donors because the shallowest expected binding energy for an electron bound to an isolated donor is approximately 47 meV. The work done on this topic by a few group of scientists has been studied.
Recommended Citation
Farhad-Garousi, Mark, "Processing, structural and electrical properties of SiC" (1994). Theses. 1617.
https://digitalcommons.njit.edu/theses/1617
