Low pressure chemical vapor deposition of silicon nitride films from tridimethylaminosilane

Author

Xin Lin, New Jersey Institute of Technology

Document Type

Thesis

Date of Award

Fall 1995

Degree Name

Master of Science in Materials Science and Engineering - (M.S.)

Department

Committee for the Interdisciplinary Program in Materials Science and Engineering

First Advisor

Roland A. Levy

Second Advisor

James M. Grow

Third Advisor

David S. Kristol

Abstract

In this study amorphous stoichiometric silicon nitride films were synthesized by low pressure chemical vapor deposition (LPCVD) using tri(dimethylamino) silane (TDMAS) and ammonia (NH₃). The growth kinetics were determined as a function of temperature in the range of 650 - 900 °C, total pressure in the range of 0.15 - 0.60 Torr, and NH₃/TDMAS flow ratio in the range of 0 - 10. At constant condition of pressure (0.5 Torr), TDMSA flow rate (10 sccm) and NH₃ flow rate (100 sccm), the deposition rate of as-deposited silicon nitride films was found to follow an Arrehnius behavior in the temperature range of 650 - 800 °C with an activation energy of 41 ± 3 kcal mol^-1. The film characterizations including compositional, structural, physical, optical and mechanical properties were determined by using XPS, RBS, X-ray diffraction, Nanospec interferometry, Ellipsometer, FTIR, UV Visible, as well as other techniques. The results demonstrated the feasibility of using TDMAS in the synthesis of high quality silicon nitride films by LPCVD.

Recommended Citation

Lin, Xin, "Low pressure chemical vapor deposition of silicon nitride films from tridimethylaminosilane" (1995). Theses. 1558.
https://digitalcommons.njit.edu/theses/1558