Document Type
Thesis
Date of Award
Spring 6-30-1969
Degree Name
Master of Science in Electrical Engineering - (M.S.)
Department
Electrical Engineering
First Advisor
Raj Pratap Misra
Second Advisor
Mauro Zambuto
Third Advisor
Robert R. Meola
Abstract
A brief review of the fundamentals of MOSFET's is given. A correlation between threshold drift and surface states is made, with a following correlation between surface states and 1/f noise. It therefore follows that MOSFET's with a high 1/f noise level will drift more than those with a low level of 1/f noise. Experiments were carried out to show this effect, but no clear cut conclusions can be drawn from the experimental work.
Recommended Citation
Rooney, John Peter, "Correlation of 1/f noise with threshold drift in MOSFET's" (1969). Theses. 1494.
https://digitalcommons.njit.edu/theses/1494
