Date of Award
Master of Science in Electrical Engineering - (M.S.)
Raj Pratap Misra
Robert R. Meola
A brief review of the fundamentals of MOSFET's is given. A correlation between threshold drift and surface states is made, with a following correlation between surface states and 1/f noise. It therefore follows that MOSFET's with a high 1/f noise level will drift more than those with a low level of 1/f noise. Experiments were carried out to show this effect, but no clear cut conclusions can be drawn from the experimental work.
Rooney, John Peter, "Correlation of 1/f noise with threshold drift in MOSFET's" (1969). Theses. 1494.