Date of Award

Spring 1969

Document Type

Thesis

Degree Name

Master of Science in Electrical Engineering - (M.S.)

Department

Electrical Engineering

First Advisor

Raj Pratap Misra

Second Advisor

Mauro Zambuto

Third Advisor

Robert R. Meola

Abstract

A brief review of the fundamentals of MOSFET's is given. A correlation between threshold drift and surface states is made, with a following correlation between surface states and 1/f noise. It therefore follows that MOSFET's with a high 1/f noise level will drift more than those with a low level of 1/f noise. Experiments were carried out to show this effect, but no clear cut conclusions can be drawn from the experimental work.

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