Document Type
Thesis
Date of Award
Spring 5-31-1994
Degree Name
Master of Science in Applied Physics - (M.S.)
Department
Physics
First Advisor
John Charles Hensel
Second Advisor
Ken K. Chin
Third Advisor
Yuan Yan
Abstract
The low temperature static characteristics of silicon junction field-effecttransistors (JFETs) have been investigated and analysed. The followingchanges were observed after cooling down the transistors: pinch-offvoltage and transconductance increases; and drain current is changedas a function of the drain-source voltage. It was found that there wasan increase in the amplifying properties and a reduction in noise voltageof cooled transistors. In addition, the temperature and voltage dependenceof leakage current have been studied. Temperatures below 77K are ofinterest in evaluating effects of impurity freezeout and temperatureabove 77K are important since actual device temperature will be aboutthe ambient. Operation of FET circuits at liquid nitrogen temperaturehas been suggested as a means of improving circuit and system performance.
Recommended Citation
Zhu, Wei, "Low temperature performance of field effect transistors" (1994). Theses. 1225.
https://digitalcommons.njit.edu/theses/1225
