Date of Award
Master of Science in Applied Chemistry - (M.S.)
Chemical Engineering, Chemistry and Environmental Science
James M. Grow
Roland A. Levy
Lev N. Krasnoperov
This study is focused on the synthesis and characterization of silicon dioxide thin films deposited on silicon wafers by plasma enhanced chemical vapor deposition(PECVD), using diethylsilane (DES) as a precursor and nitrous oxide (N2O) as the oxidant. The process parameters, such as temperature, pressure and reactant gas composition have been systematically varied and their effects on the film growth rate and properties were investigated. The growth rate was found to be inversely proportional to the temperature in the examined range of 100-300°C. It increased with increasing N2O/DES flow rate ratio as the total flow rate increased from 135 to 315 sccm, and also increased with the chamber pressure and saturated. The optimized deposition condition appeared to be at 300°C, 300mTorr, and a flow rate ratio N2O/DES = 240 sccm/15 sccm. For these conditions, the films were found to have a high growth rate of 327Å/min with density of 2.14g/cm3 and refractive index of 1.47.
Chen, Lan, "Synthesis and characterization of silicon dioxide thin films by plasma enhances chemical vapor deposition from diethylsilane and nitrous oxide" (1995). Theses. 1177.