Synthesis and characterization of silicon dioxide thin films by plasma enhances chemical vapor deposition from diethylsilane and nitrous oxide

Author

Lan Chen, New Jersey Institute of Technology

Document Type

Thesis

Date of Award

Fall 10-31-1995

Degree Name

Master of Science in Applied Chemistry - (M.S.)

Department

Chemical Engineering, Chemistry and Environmental Science

First Advisor

James M. Grow

Second Advisor

Roland A. Levy

Third Advisor

Lev N. Krasnoperov

Abstract

This study is focused on the synthesis and characterization of silicon dioxide thin films deposited on silicon wafers by plasma enhanced chemical vapor deposition(PECVD), using diethylsilane (DES) as a precursor and nitrous oxide (N₂O) as the oxidant. The process parameters, such as temperature, pressure and reactant gas composition have been systematically varied and their effects on the film growth rate and properties were investigated. The growth rate was found to be inversely proportional to the temperature in the examined range of 100-300°C. It increased with increasing N₂O/DES flow rate ratio as the total flow rate increased from 135 to 315 sccm, and also increased with the chamber pressure and saturated. The optimized deposition condition appeared to be at 300°C, 300mTorr, and a flow rate ratio N₂O/DES = 240 sccm/15 sccm. For these conditions, the films were found to have a high growth rate of 327Å/min with density of 2.14g/cm³ and refractive index of 1.47.

Recommended Citation

Chen, Lan, "Synthesis and characterization of silicon dioxide thin films by plasma enhances chemical vapor deposition from diethylsilane and nitrous oxide" (1995). Theses. 1177.
https://digitalcommons.njit.edu/theses/1177