Document Type
Thesis
Date of Award
Fall 1-31-1995
Degree Name
Master of Science in Engineering Science- (M.S.)
Department
Committee for the Interdisciplinary Program in Materials Science and Engineering
First Advisor
Roland A. Levy
Second Advisor
James M. Grow
Third Advisor
David S. Kristol
Abstract
Recently, copper has been found as a possible substitute for Al alloys because of its low resistivity (1.67 μΩ • cm) and potentially improved resistance to electromigration. Conventional physical vapor deposition (PVD) method do not provide the conformal deposition profile for the high density integrated circuit, therefore, chemical vapor deposition (CVD) has become the most promising method for the resulting conformal profile.
In this work, a cold wall, single wafer, CVD tungsten reactor was used for the deposition of copper with Cu(I)(hfac)(tmvs). Film growth rates were between 100 to 800 A/min depending on processing conditions, and an Arrhenius type activation energy of 16.1 kcal/mole was obtained in the temperature region of 150-180 °C. No significant amount of contamination is detected in the copper films, and the resistivity of the films was routinely near 2.2 μΩ • cm when the film was 5000 A or more. The surface roughness of the films increased with increasing film thickness, and the crystal orientation was found as a function of growth rate. These obtained results demonstrated the feasibility of using Cu(I)(hfac)(tmvs) in the synthesis of high purity copper films using liquid injection by LPCVD.
Recommended Citation
King, Wei-Shang, "Low pressure chemical vapor deposition of copper films from CU(I)(HFAC)(TMVS)" (1995). Theses. 1168.
https://digitalcommons.njit.edu/theses/1168
