Document Type


Date of Award

Fall 1-31-1995

Degree Name

Master of Science in Engineering Science- (M.S.)


Committee for the Interdisciplinary Program in Materials Science and Engineering

First Advisor

Roland A. Levy

Second Advisor

James M. Grow

Third Advisor

David S. Kristol


Recently, copper has been found as a possible substitute for Al alloys because of its low resistivity (1.67 μΩ • cm) and potentially improved resistance to electromigration. Conventional physical vapor deposition (PVD) method do not provide the conformal deposition profile for the high density integrated circuit, therefore, chemical vapor deposition (CVD) has become the most promising method for the resulting conformal profile.

In this work, a cold wall, single wafer, CVD tungsten reactor was used for the deposition of copper with Cu(I)(hfac)(tmvs). Film growth rates were between 100 to 800 A/min depending on processing conditions, and an Arrhenius type activation energy of 16.1 kcal/mole was obtained in the temperature region of 150-180 °C. No significant amount of contamination is detected in the copper films, and the resistivity of the films was routinely near 2.2 μΩ • cm when the film was 5000 A or more. The surface roughness of the films increased with increasing film thickness, and the crystal orientation was found as a function of growth rate. These obtained results demonstrated the feasibility of using Cu(I)(hfac)(tmvs) in the synthesis of high purity copper films using liquid injection by LPCVD.



To view the content in your browser, please download Adobe Reader or, alternately,
you may Download the file to your hard drive.

NOTE: The latest versions of Adobe Reader do not support viewing PDF files within Firefox on Mac OS and if you are using a modern (Intel) Mac, there is no official plugin for viewing PDF files within the browser window.