Date of Award

Fall 1994

Document Type

Thesis

Degree Name

Master of Science in Engineering Science- (M.S.)

Department

Committee for the Interdisciplinary Program in Materials Science and Engineering

First Advisor

Roland A. Levy

Second Advisor

James M. Grow

Third Advisor

David S. Kristol

Abstract

Recently, copper has been found as a possible substitute for Al alloys because of its low resistivity (1.67 μΩ • cm) and potentially improved resistance to electromigration. Conventional physical vapor deposition (PVD) method do not provide the conformal deposition profile for the high density integrated circuit, therefore, chemical vapor deposition (CVD) has become the most promising method for the resulting conformal profile.

In this work, a cold wall, single wafer, CVD tungsten reactor was used for the deposition of copper with Cu(I)(hfac)(tmvs). Film growth rates were between 100 to 800 A/min depending on processing conditions, and an Arrhenius type activation energy of 16.1 kcal/mole was obtained in the temperature region of 150-180 °C. No significant amount of contamination is detected in the copper films, and the resistivity of the films was routinely near 2.2 μΩ • cm when the film was 5000 A or more. The surface roughness of the films increased with increasing film thickness, and the crystal orientation was found as a function of growth rate. These obtained results demonstrated the feasibility of using Cu(I)(hfac)(tmvs) in the synthesis of high purity copper films using liquid injection by LPCVD.

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