Document Type
Thesis
Date of Award
Fall 1-31-1997
Degree Name
Master of Science in Materials Science and Engineering - (M.S.)
Department
Committee for the Interdisciplinary Program in Materials Science and Engineering
First Advisor
Kenneth Rudolph Farmer
Second Advisor
Roland A. Levy
Third Advisor
Ken K. Chin
Abstract
The instability of defects created in ultra-thin insulator, metal-oxide-silicon devices biased in the direct tunnel regime is investigated. For the case of electron injection from the silicon substrate, nearly complete defect relaxation is observed after the bias is removed, allowing the possibility of re-generating the defects. Modeling the defect generation process and examining differences between initial and subsequent degradation periods lead to an improved picture of both the relaxation process and the nature of the involved defects.
Recommended Citation
Xie, Lihui, "Relaxation and the nature of electrical stress related defects in ultra-thin dioxide on silicon" (1997). Theses. 1050.
https://digitalcommons.njit.edu/theses/1050
