Date of Award

Fall 1996

Document Type

Thesis

Degree Name

Master of Science in Materials Science and Engineering - (M.S.)

Department

Committee for the Interdisciplinary Program in Materials Science and Engineering

First Advisor

Kenneth Rudolph Farmer

Second Advisor

Roland A. Levy

Third Advisor

Ken K. Chin

Abstract

The instability of defects created in ultra-thin insulator, metal-oxide-silicon devices biased in the direct tunnel regime is investigated. For the case of electron injection from the silicon substrate, nearly complete defect relaxation is observed after the bias is removed, allowing the possibility of re-generating the defects. Modeling the defect generation process and examining differences between initial and subsequent degradation periods lead to an improved picture of both the relaxation process and the nature of the involved defects.

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