Date of Award
Master of Science in Materials Science and Engineering - (M.S.)
Committee for the Interdisciplinary Program in Materials Science and Engineering
Kenneth Rudolph Farmer
Roland A. Levy
Ken K. Chin
The instability of defects created in ultra-thin insulator, metal-oxide-silicon devices biased in the direct tunnel regime is investigated. For the case of electron injection from the silicon substrate, nearly complete defect relaxation is observed after the bias is removed, allowing the possibility of re-generating the defects. Modeling the defect generation process and examining differences between initial and subsequent degradation periods lead to an improved picture of both the relaxation process and the nature of the involved defects.
Xie, Lihui, "Relaxation and the nature of electrical stress related defects in ultra-thin dioxide on silicon" (1996). Theses. 1050.