Date of Award

Fall 1996

Document Type

Thesis

Degree Name

Master of Science in Materials Science and Engineering - (M.S.)

Department

Committee for the Interdisciplinary Program in Materials Science and Engineering

First Advisor

Roland A. Levy

Second Advisor

Robert Boris Marcus

Third Advisor

Trevor Tyson

Abstract

Hafnium carbide thin films of various characteristics were deposited on silicon substrates using dc magnetron sputtering. A HfC target was used as a sputtering source and Ar was used as a sputtering gas during deposition. The variables investigated were total sputtering gas pressure and power. Optimum characteristics were achieved with a total sputtering gas pressure of 5 mTorr and power of 200 W. No evidence for oxidation of the film was found at a depth below 400A for deposited and annealed films. Binding characteristics were obtained from ESCA data. The compressive film stress increased when sputtering gas pressure decreased. The lowest HfC film resistivity achieved was 210 μΩ-cm. This resistivity was obtained by using a low sputtering gas pressure. High power reduced film resistivities. Very low base pressures and cycling of chamber were found to lower the resistivity. Annealing of HfC deposited film reduced the stress and resistivity by approximately 10%.

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