Date of Award
Master of Science in Chemical Engineering - (M.S.)
Chemical Engineering, Chemistry and Environmental Science
James M. Grow
R. P. T. Tomkins
Lev N. Krasnoperov
A literature study to investigate the incorporation of silicon into SiC and Si3N4 films from various organosilanes was carried out. The Arrhenius activation energy for the synthesis of silicon, silicon carbide and silicon nitride films from various organosilanes range from 165-210 kJ/mol. A review of recent studies have indicated that silicon deposition is the rate determining step in the synthesis of silicon from silane. It is proposed here that this hypothesis can be established for the synthesis of silicon carbide, silicon nitride and silicon carbonitride film. Limited experiments indicated that the silicon deposition is a rate determining step in the deposition of silicon carbonitride films from tri(dimethylamino)silane (TDMAS).
Shah, Rajive, "Low pressure chemical vapor deposition of silicon carbonitride films from tri(dimethylamino) silane" (1997). Theses. 1033.