Synthesis and characterization of silicon dioxide thin films by low pressure chemical vapor deposition
Date of Award
Master of Science in Engineering Science- (M.S.)
Committee for the Interdisciplinary Program in Materials Science and Engineering
Roland A. Levy
Lev N. Krasnoperov
Ditertiarybutylsilane ( DTBS ) and oxygen have been used as precursors to produce silicon dioxide films by low pressure chemical vapor deposition. These films were synthesized in the temperature range of 600°C to 800°C at constant pressure, and at different gas flow composition. The films were found to be uniform with a composition that varied with deposition temperature and gas flow ratio. The growth rate was found to follow an Arrhenius behavior with an apparent activation energy of 2.62 kcal/mol. The growth rate was seen to increase with higher distance between wafers and to vary as a function of square root of the 0, flow rate. The refractive index of the films were found to be 1.462 at deposition temperature 600°C and increased with higher temperature. The stresses were very low tensile in the films and tended to be compressive with increasing deposition temperature.
Niyomwas, Sutham, "Synthesis and characterization of silicon dioxide thin films by low pressure chemical vapor deposition" (1997). Theses. 1025.