Date of Award

Fall 1996

Document Type

Thesis

Degree Name

Master of Science in Engineering Science- (M.S.)

Department

Committee for the Interdisciplinary Program in Materials Science and Engineering

First Advisor

Roland A. Levy

Second Advisor

Lev N. Krasnoperov

Third Advisor

Vladimir Zaitsev

Abstract

Ditertiarybutylsilane ( DTBS ) and oxygen have been used as precursors to produce silicon dioxide films by low pressure chemical vapor deposition. These films were synthesized in the temperature range of 600°C to 800°C at constant pressure, and at different gas flow composition. The films were found to be uniform with a composition that varied with deposition temperature and gas flow ratio. The growth rate was found to follow an Arrhenius behavior with an apparent activation energy of 2.62 kcal/mol. The growth rate was seen to increase with higher distance between wafers and to vary as a function of square root of the 0, flow rate. The refractive index of the films were found to be 1.462 at deposition temperature 600°C and increased with higher temperature. The stresses were very low tensile in the films and tended to be compressive with increasing deposition temperature.

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