Bias temperature instability and its correlation to flicker (1/f) noise in FinFETs

Document Type

Conference Proceeding

Publication Date

4-19-2017

Abstract

Flicker noise is used as a diagnostic tool to analyze the degradation mechanism before and after BTI in thin and thick gate oxide FinFETs. Although nFETs show lower BTI than pFETs for thick gate oxides, comparable BTI degradation is noticed between thin gate oxide nFETs and pFETs. Analyses of noise spectra reveal that: the degradation of oxide occurs closer to metal gate rather than channel during BTI. The distance between the defect location and channel plays an important role in noise mechanism for nMOS. As the defects are closer to the channel and coulombic scattering is enhanced, the noise in nFETs is modified from carrier number fluctuation to mobility fluctuation model.

Identifier

85019494336 (Scopus)

ISBN

[9781509041923]

Publication Title

Proceedings of the 2016 IEEE International Integrated Reliability Workshop Iirw 2016

External Full Text Location

https://doi.org/10.1109/IIRW.2016.7904913

First Page

103

Last Page

106

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