Modeling and simulation of 1/f noise during threshold switching for phase change memory

Document Type

Conference Proceeding

Publication Date

1-1-2018

Abstract

In phase change memory (PCM), the threshold switching effect contributes to the programming speed and can cause undesirable disturbs during the read operation. The impact of 1/f noise fluctuations on the transient switching is crucial in designing the read/program conditions and to estimate the programming times and read disturb probability. In this work, we have developed a VerilogA compact model build on analytical model for subthreshold conduction and threshold switching in amorphous chalcogenide with the effect of 1/f noise. The model is simulated in Cadence environment to study the effect on delay and switching time for applied voltage along with investigation of PCM device scaling on threshold voltage and programming speed.

Identifier

85048618080 (Scopus)

ISBN

[9789811082399]

Publication Title

Lecture Notes in Electrical Engineering

External Full Text Location

https://doi.org/10.1007/978-981-10-8240-5_8

e-ISSN

18761119

ISSN

18761100

First Page

77

Last Page

83

Volume

475

This document is currently not available here.

Share

COinS