Self-heating assessment on bulk FinFET devices through characterization and predictive simulation

Document Type

Article

Publication Date

6-1-2018

Abstract

This paper describes three different measurement methodologies for the electrical characterization of FinFET self-heating at wafer-level. Finite element simulations of heat transport are used to interpret heater-sensor temperature gradients and validate the measurements. The different sensor types were designed to use the threshold voltage (VT) of an adjacent FET, the forward bias (VD) of an adjacent pn-junction or the gate resistance (RG) of the device itself. We report that self-heating is underestimated by 35% when sensed at a neighboring device. We also confirm that heat from local and surrounding sources are additive.

Identifier

85044349500 (Scopus)

Publication Title

IEEE Transactions on Device and Materials Reliability

External Full Text Location

https://doi.org/10.1109/TDMR.2018.2818930

e-ISSN

15582574

ISSN

15304388

First Page

133

Last Page

138

Issue

2

Volume

18

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