Axial silicon-germanium nanowire heterojunctions: Structural properties and carrier transport

Document Type

Article

Publication Date

5-28-2019

Abstract

We analyzed structural and electrical properties of axial Si-Ge nanowire heterojunctions produced by the vapor-liquid-solid growth method using Au nanoclusters as catalysts. The observed nonlinear current-voltage characteristics, strong flicker noise, and damped current oscillations with frequencies of 20-30 MHz are explained using a proposed Si-Ge nanowire heterojunction energy band diagram that includes energy states associated with structural imperfections, as revealed by transmission electron microscopy.

Identifier

85066809960 (Scopus)

Publication Title

Journal of Applied Physics

External Full Text Location

https://doi.org/10.1063/1.5091934

e-ISSN

10897550

ISSN

00218979

Issue

20

Volume

125

Fund Ref

National Science Foundation

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