Self-heating effects on hot carrier degradation and its impact on logic circuit reliability

Authors

Peter Paliwoda, Global Foundries, Inc.
Zakariae Chbili, Intel Corporation
Andreas Kerber, Global Foundries, Inc.
Tanya Nigam, Global Foundries, Inc.
K. Nagahiro, Global Foundries, Inc.
Salvatore Cimino, Global Foundries, Inc.
Maria Toledano-Luque, Global Foundries, Inc.
Luigi Pantisano, Global Foundries, Inc.
Byoung Woon Min, Global Foundries, Inc.
Durgamadhab Misra, Newark College of Engineering

Document Type

Article

Publication Date

6-1-2019

Abstract

This paper discusses the impact of self-heating (SH) on ring-oscillator (RO) reliability and its correlation to hot carrier (HC) degradation. We show that HC degradation modulation due to SH is only significant for logic PFETs at highly accelerated dc conditions. We show that these SH effects on HC are greatly reduced at moderate acceleration. By stressing the ROs at extreme conditions, we show that the SH impact on HC does not affect RO degradation.

Identifier

85067122527 (Scopus)

Publication Title

IEEE Transactions on Device and Materials Reliability

External Full Text Location

https://doi.org/10.1109/TDMR.2019.2916230

e-ISSN

15582574

ISSN

15304388

First Page

249

Last Page

254

Issue

2

Volume

19

Recommended Citation

Paliwoda, Peter; Chbili, Zakariae; Kerber, Andreas; Nigam, Tanya; Nagahiro, K.; Cimino, Salvatore; Toledano-Luque, Maria; Pantisano, Luigi; Min, Byoung Woon; and Misra, Durgamadhab, "Self-heating effects on hot carrier degradation and its impact on logic circuit reliability" (2019). Faculty Publications. 7565.
https://digitalcommons.njit.edu/fac_pubs/7565