Improved dislocation model for silicon solar cells: Calculation of dark current

Authors

Vinay Budhreja
B. Sopori, National Renewable Energy Laboratory
N. M. Ravindra, New Jersey Institute of Technology
D. Misra

Document Type

Conference Proceeding

Publication Date

8-4-2015

Abstract

We have extended a previous dislocation model to include the effect of front and back surface recombination velocities in a silicon solar cell. This improved dislocation model uses Green's Function approach to solve three dimensional continuity equation in p and n layer of solar cell. Expressions for saturation current components are derived for different dislocation densities and compared with published experimental results. The modeling results also show the variation of cell parameters with dislocation density.

Identifier

84957098892 (Scopus)

ISBN

[9781479905126]

Publication Title

Conference Record of the IEEE Photovoltaic Specialists Conference

External Full Text Location

https://doi.org/10.1109/PVSC-Vol2.2013.7179249

ISSN

01608371

First Page

61

Last Page

67

Volume

2015-August

Recommended Citation

Budhreja, Vinay; Sopori, B.; Ravindra, N. M.; and Misra, D., "Improved dislocation model for silicon solar cells: Calculation of dark current" (2015). Faculty Publications. 6854.
https://digitalcommons.njit.edu/fac_pubs/6854