III-Nitride nanowire optoelectronics

Authors

Songrui Zhao, Université McGill
Hieu P.T. Nguyen, Newark College of Engineering
Md G. Kibria, Université McGill
Zetian Mi, Université McGill

Document Type

Article

Publication Date

11-1-2015

Abstract

Group-III nitride nanowire structures, including GaN, InN, AlN and their alloys, have been intensively studied in the past decade. Unique to this material system is that its energy bandgap can be tuned from the deep ultraviolet (~6.2 eV for AlN) to the near infrared (~0.65 eV for InN). In this article, we provide an overview on the recent progress made in III-nitride nanowire optoelectronic devices, including light emitting diodes, lasers, photodetectors, single photon sources, intraband devices, solar cells, and artificial photosynthesis. The present challenges and future prospects of III-nitride nanowire optoelectronic devices are also discussed.

Identifier

84951863085 (Scopus)

Publication Title

Progress in Quantum Electronics

External Full Text Location

https://doi.org/10.1016/j.pquantelec.2015.11.001

ISSN

00796727

First Page

14

Last Page

68

Volume

44

Recommended Citation

Zhao, Songrui; Nguyen, Hieu P.T.; Kibria, Md G.; and Mi, Zetian, "III-Nitride nanowire optoelectronics" (2015). Faculty Publications. 6690.
https://digitalcommons.njit.edu/fac_pubs/6690