Analysis of alloying and built-in voltage in thin film chalcogenide solar cells using modulation spectroscopy
Document Type
Conference Proceeding
Publication Date
12-14-2015
Abstract
Modulation spectroscopy has been performed on superstrate CdS/CdTe solar cells prepared by close-spaced sublimation. Photoreflectance (PR) measurements were conducted near the CdTe E0 band edge using a variable-wavelength probe beam in conjunction with a chopped pump beam. A fit to the observed PR spectrum was made using two third-derivative, low-field lineshapes. The band gap of the active material near the junction is 1.46 eV (CdTe1-xSx). The envelope function varied as 1 - V/Vbi· The PR spectrum shifted with a temperature coefficient of -0.31 meV/K. Photoreflectance spectroscopy offers a powerful method of determining absorber band gaps, alloying, and built-in voltage in thin-film solar cells.
Identifier
84961634138 (Scopus)
ISBN
[9781479979448]
Publication Title
2015 IEEE 42nd Photovoltaic Specialist Conference Pvsc 2015
External Full Text Location
https://doi.org/10.1109/PVSC.2015.7356019
Recommended Citation
Delahoy, Alan E.; Cheng, Zimeng; Pan, Jingong; Peng, Shou; and Chin, Ken K., "Analysis of alloying and built-in voltage in thin film chalcogenide solar cells using modulation spectroscopy" (2015). Faculty Publications. 6624.
https://digitalcommons.njit.edu/fac_pubs/6624
