(Ga,N) and (Cu,Ga) co-doped ZnO films for improving photoelectrochemical response for solar driven hydrogen production

Document Type

Conference Proceeding

Publication Date

1-1-2010

Abstract

In this study, Bandgap-reduced p-type ZnO thin films were synthesized through Cu and Ga co-doping. The ZnO:(Cu,Ga) films were synthesized by RF magnetron sputtering in O2 gas ambient at room temperature and then annealed at 500°C in air for 2 hours. We found that the carrieT concentration tuning does not significantly change the bandgap and crystallinity of the ZnO:Cu films. However, it can optimize the carrier concentration and thus dramatically enhance PEC response for the bandgap-reduced p-type ZnO thin films. The co-doped ZnO:(Ga,N) films were deposited by co-sputtering at room temperature, followed by post-annealing at 500°C We found that the ZnO:(Ga,N) films exhibited greatly enhanced crystallinity compared to ZnO:N films doped with pure N. Furthermore, the ZnO:(Ga,N) films showed much higher N-incorporation than ZnO:N films. As a result, the ZnO:(Ga,N) films showed significantly higher photocurrents than ZnO:N films. ©The Electrochemical Society.

Identifier

84857395688 (Scopus)

ISBN

[9781607682325, 9781566778824]

Publication Title

Ecs Transactions

External Full Text Location

https://doi.org/10.1149/1.3557880

e-ISSN

19386737

ISSN

19385862

First Page

95

Last Page

104

Issue

26

Volume

33

This document is currently not available here.

Share

COinS