Field dependent electrical conduction in TiN/HfO2/SiO 2/P-Si (nMOS) capacitor for before and after stressing

Document Type

Conference Proceeding

Publication Date

1-1-2010

Abstract

The electrical conduction mechanism contributing to the leakage current at different field regions and different temperatures have been studied in this work. The current-voltage (I-V) measurement of TiN/HfO2/SiO 2/P-Si nMOS capacitor, taken before and after constant voltage stress suggests that Poole-Frenkel mechanism is the dominant conduction mechanism. It was also observed that at low field region Ohmic conduction dominates. Trap energy level (φt) of 0.36 eV, obtained from Poole-Frenkel mechanism indicates that the defect is oxygen-related and is a good match with the reported value for V-/V-- in HfO2. Significant charge trapping at low level stress was observed whereas at high level and elevated temperature stressing suggests a variation of trap energy level indicating new defect formation. ©The Electrochemical Society.

Identifier

79952679758 (Scopus)

ISBN

[9781566778220, 9781607681724]

Publication Title

Ecs Transactions

External Full Text Location

https://doi.org/10.1149/1.3481648

e-ISSN

19386737

ISSN

19385862

First Page

591

Last Page

599

Issue

3

Volume

33

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