Submicron beam X-ray diffraction of nanoheteroepitaxily grown GaN: Experimental challenges and calibration procedures

Document Type

Article

Publication Date

2-1-2010

Abstract

Highly relaxed GaN nanodots and submicron ridges have been selectively grown in the NSAG regime using MOVPE on lattice mismatched 6H-SiC and AlN substrates. 2D real space and 3D reciprocal space mapping was performed with a CCD detector using 10.4 keV synchrotron X-ray radiation at the 2-ID-D micro-diffraction beamline at Advanced Photon Source (APS). Calibration procedures have been developed to overcome the unique challenges of analyzing NSAG structures grown on highly mismatched substrates. We studied crystallographic planar bending on the submicron scale and found its correlation with strain relaxation in the NSAG ridges. © 2009 Elsevier B.V. All rights reserved.

Identifier

76049099796 (Scopus)

Publication Title

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms

External Full Text Location

https://doi.org/10.1016/j.nimb.2009.09.016

ISSN

0168583X

First Page

320

Last Page

324

Issue

3-4

Volume

268

Grant

UMI 2958

Fund Ref

U.S. Department of Energy

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